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QPD0020TR7

Name: Qorvo QPD0020TR7
Brand: Qorvo
SKU: 772-QPD0020TR7
Price: 59.9 USD
Availability: OutOfStock

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Mouser #:

772-QPD0020TR7

Mfr. #:

QPD0020TR7

Mfr.:

Qorvo

Description:

GaN FETs DC-6GHz 35W 50V GaN Transistor

Datasheet:

QPD0020TR7 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package / Case:	QFN-20
Maximum Operating Frequency:	2.69 GHz
Minimum Operating Frequency:	2.62 GHz
Technology:	GaN
Brand:	Qorvo
Configuration:	Single
Development Kit:	QPD0020EVB02
Gain:	16.7 dB
Output Power:	34.7 W
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Series:	QPD0020
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	HEMT
Part # Aliases:	QPD0020

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Datasheet

QPD0020TR7 Datasheet (PDF)

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Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

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QPD1014A GaN Input Matched Transistors

15W (P_3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

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QPD1011A GaN Input Matched Transistors

7W (P_3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

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QPD1004A GaN Input Matched Transistors

25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

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QPD1035 GaN RF Power Transistors

40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply.

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Availability

Stock:: 0

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On Order:: 500
Factory Lead-Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$59.90	$59.90
	$49.47	$494.70
	$46.87	$1,171.75
	$46.28	$4,628.00
Full Reel (Order in multiples of 500)
	$46.28	$23,140.00

QPD0020TR7

Mfr.: Qorvo

Description: GaN FETs DC-6GHz 35W 50V GaN Transistor

Specifications

Documents (1)

Datasheet

Environmental Documents

Product & Trade Compliance

More Information

QPD0020 GaN RF Power Transistors

FEATURED PRODUCTS QORVO

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Mfr.:

Qorvo

Description:

GaN FETs DC-6GHz 35W 50V GaN Transistor

FEATURED PRODUCTS

QORVO