Tray SRAM

Results: 9,441
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Memory Size Organization Access Time Maximum Clock Frequency Interface Type Supply Voltage - Max Supply Voltage - Min Supply Current - Max Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package / Case Qualification Packaging
Renesas Electronics SRAM 2.5V CORE ZBT X18 18M
46Expected 11/30/2026
Min.: 1
Mult.: 1

18 Mbit 1 M x 18 4.2 ns 133 MHz Parallel 2.625 V 2.375 V 215 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
Renesas Electronics SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
381Expected 11/26/2026
Min.: 1
Mult.: 1

1 Mbit 64 k x 16 12 ns Parallel 3.6 V 3 V 160 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
841On Order
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns Parallel 3.6 V 3 V 170 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 256Kx36 ZBT SYNC 3.3V FLOW-THRU SRAM
141On Order
Min.: 1
Mult.: 1

9 Mbit 256 k x 36 8.5 ns Parallel 3.465 V 3.135 V 60 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
Renesas Electronics SRAM 9M 3.3V PBSRAM SLOW F/T
196Expected 11/13/2026
Min.: 1
Mult.: 1

9 Mbit 256 k x 36 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 285 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
36Expected 8/25/2026
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
47Expected 9/16/2026
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
36Expected 8/25/2026
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 230 mA, 250 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M
4Expected 8/25/2026
Min.: 1
Mult.: 1
36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 205 mA, 240 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 1M x 36 32M
10Expected 9/14/2026
Min.: 1
Mult.: 1
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 2.7 V 1.7 V 260 mA, 315 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8 or 1.5V 2M x 36 72M
1Expected 9/23/2026
Min.: 1
Mult.: 1
72 Mbit 2 M x 36 250 MHz Parallel 1.9 V 1.7 V - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M
42Expected 8/28/2026
Min.: 1
Mult.: 1

9 Mbit 256 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
Renesas Electronics SRAM 32K X 36 SYNCH DPRAM
41Expected 8/24/2026
Min.: 1
Mult.: 1
No
1 Mbit 32 k x 36 6 ns 133 MHz 3.45 V 3.15 V 360 mA - 40 C + 85 C SMD/SMT BGA-256 Tray
Renesas Electronics SRAM 64K X 36 3.3V SYNC DP RAM
40Expected 12/21/2026
Min.: 1
Mult.: 1
No
2 Mbit 64 k x 36 25 ns 133 MHz Parallel 3.45 V 3.15 V 480 mA - 40 C + 85 C SMD/SMT CABGA-256 Tray
Infineon Technologies CY7C1461KV33-133AXI
Infineon Technologies SRAM No Bus Latency(NoBL) Burst SRAM
72Expected 9/17/2026
Min.: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 133 MHz - 40 C + 85 C Tray
Infineon Technologies CY7C4142KV13-933FCXI
Infineon Technologies SRAM SYNC
39Expected 11/26/2026
Min.: 1
Mult.: 1

85 ps 4 A Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M
12On Order
Min.: 1
Mult.: 1
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 305 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
Infineon Technologies SRAM 2Mb 3V 45ns 128K x 16 LP SRAM
675Expected 12/24/2026
Min.: 1
Mult.: 1

2 Mbit 128 k x 16 45 ns Parallel 3.6 V 2.2 V 20 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM
269Expected 12/28/2026
Min.: 1
Mult.: 1

1 Mbit 64 k x 16 12 ns Parallel 5.5 V 4.5 V 180 mA 0 C + 70 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 9M ZBT SLOW X36 P/L 3.3V Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

9 Mbit 256 k x 36 10 ns 100 MHz Parallel 3.465 V 3.135 V 250 mA 0 C + 70 C SMD/SMT TQFP-100 Tray

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
1,755Expected 10/16/2026
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 2.4 V 35 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
1,918Expected 10/16/2026
Min.: 1
Mult.: 1

4 Mbit 512 k x 8 10 ns Parallel 3.6 V 2.4 V 45 mA - 40 C + 85 C SMD/SMT BGA-36 Tray
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp
471Expected 8/25/2026
Min.: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns Parallel 3.6 V 2.7 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Tray

ISSI SRAM 2Mb 128Kx16 55ns Async SRAM
395Expected 8/24/2026
Min.: 1
Mult.: 1

2 Mbit 128 k x 16 55 ns Parallel 3.6 V 2.5 V 3 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
Alliance Memory SRAM SRAM, 4Mb, 256K x 16, 3.3V, 44pin TSOP II, 10ns, Commercial Temp - Tray
270Expected 9/29/2026
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 15 ns Parallel 3.6 V 3 V 130 mA 0 C + 70 C SMD/SMT TSOP-II-44 Tray