GP2T080A120U

Name: SemiQ GP2T080A120U
Brand: SemiQ
SKU: 148-GP2T080A120U
Price: 7.72 USD
Availability: InStock

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Mouser #:

148-GP2T080A120U

Mfr. #:

GP2T080A120U

Mfr.:

SemiQ

Description:

SiC MOSFETs

Datasheet:

GP2T080A120U Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	58 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	10 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	6 ns
Series:	GP2T080A120U
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	10 ns

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Filter Document:

Datasheet

GP2T080A120U Datasheet (PDF)

PCN

Product Change Notification (PDF)

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GP2T080A120U 1200V SiC N-Channel MOSFET

SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET offers low capacitance and high system efficiency. This MOSFET features high-speed switching, increased power density, reduced heat-sink size, and a reliable body diode. The GP2T080A120U 1200V SiC N-Channel MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. This MOSFET can be used in the applications such as solar inverters, EV charging stations, induction heating and welding, and motor drivers.