Power Integrations 600V Qspeed Silicon Diode
Power Integrations 600V Qspeed Silicon Diode is designed to replace SiC diodes for efficient performance in high switching frequency applications. The 0.35-micron technology of the Qspeed diode improves performance and gives predictable results. This diode features low QRR of any 600V silicon diode, low IRRM, low tRR, and soft recovery. The Qspeed silicon diode is AEC-Q1011 qualified, combines both a Schottky and PiN junction in the same device, and is ideal for automotive applications.
Features
- 0.35-micron technology
- IATF16949 certified wafer fab and assembly sites
- Reduces turn-on losses
- Soft switching to reduce EMI
- High switching speed
- Low QRR of any 600V silicon diode
- Low IRRM
- Low tRR
- Soft recovery
- AEC-Q1011 qualified
- Combines both a Schottky and PiN junction in the same device
Videos
Cross-Section Of A Qspeed Diode
Highly Efficient When Used In EV Charger PFC
Đã phát hành: 2021-09-09
| Đã cập nhật: 2022-03-11