IS42S16320B 512Mb Synchronous DRAM

ISSI IS42S16320B 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. This ISSI 512Mb SDRAM is designed to operate in 3.3V V_DD and 3.3V V_DDQ memory systems containing 536,870,912 bits. IS42S16320B SDRAM is internationally configured as a quad-bank DRAM with a synchronous interface. The 512Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide pre-charge time, and the capability to randomly change column addresses on each clock cycle during burst access.