IXYS GenX3™ Insulated-Gate Bipolar Transistors (IGBTs)

IXYS GenX3™ Insulated-Gate Bipolar Transistors (IGBTs) are PT (Punch Through) manufactured using a robust HDMOS IGBT process. The 600V GenX3 components are optimized for high-current applications requiring soft-switching frequencies upwards of 200kHz and hard-switching frequencies of 40kHz. The 600V IGBTs provide higher surge current capabilities, a lower saturation voltage, and lower energy losses offering designers a viable option for switching applications at the 600V range. The 1200V GenX3 IGBTs offer lower saturation voltages, lower switching losses, and higher surge current capabilities. The 1200V models are aimed at the high-voltage power conversion market.