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Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs

Micro Commercial Components (MCC) SICWx Silicon Carbide (SiC) MOSFETs are high-speed switching 650V SiC MOSFETs. These MOSFETs utilize SiC MOSFET technology and are well-suited for high-voltage applications, providing reliable operation in harsh industrial environments. The SICWx MOSFETs are designed with low RDS(on) and low gate charge to reduce switching losses and contribute to higher overall system efficiency. The efficiency-boosting design and TO-247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance the versatility. The SICWx MOSFETs are made with rugged design and avalanche capable to enable better thermal management and efficiency. These MOSFETs are ideally used in power supplies, telecommunication, renewable energy systems, and motor drives.

Features

  • SiC MOSFET technology
  • High-speed switching
  • 650V drain-source voltage (VDS)
  • 25mΩ to 100mΩ ranging low drain-source on-resistance RDS(on)
  • -55°C to 175°C operating temperature range
  • Reduction of heat sink requirements
  • Avalanche ruggedness for enhanced durability
  • Low switching losses
  • TO-247 3-pin and 4-pin package options
  • Kelvin-source connection for precision (4-pin only)
  • Halogen-free "Green" devices
  • Lead-free
  • RoHS compliant

Applications

  • Telecommunications:
    • Base station power amplifiers
    • Signal processing equipment
    • Network infrastructure
  • Uninterruptible Power Supply (UPS) systems:
    • UPS for critical systems
    • Backup power solutions
    • Power conditioning equipment
  • Renewable energy:
    • Solar inverters
    • Wind turbine power conversion
    • Energy storage systems (ESS)
  • Power supplies:
    • AC-DC converters
    • DC-DC converters
    • Power management systems

Additional Information

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Mã Phụ tùng Bảng dữ liệu Id - Dòng cực máng liên tục Pd - Tiêu tán nguồn Độ hỗ dẫn thuận - Tối thiểu Rds Bật - Điện trở trên cực máng-cực nguồn Vgs th - Điện áp ngưỡng cực cổng-cực nguồn Vgs - Điện áp cực cổng-cực nguồn Vds - Điện áp đánh thủng cực máng-cực nguồn Thời gian tăng Thời gian giảm Qg - Điện tích cực cổng Thời gian trễ khi tắt điển hình Thời gian trễ khi bật điển hình Số lượng kênh Công nghệ Đóng gói Đóng gói / Vỏ bọc RoHS - Mouser
SICW025N065H4-BP SICW025N065H4-BP Bảng dữ liệu 107 A 375 W 18.2 S 35 mOhms 3.1 V - 10 V, + 22 V 650 V 50 ns 15 ns 275 nC 29 ns 28 ns 1 Channel SiC Bulk TO-247-4 Y
SICW025N065H-BP SICW025N065H-BP Bảng dữ liệu 107 A 375 W 18.2 S 35 mOhms 3.1 V - 10 V, + 22 V 650 V 50 ns 15 ns 275 nC 29 ns 28 ns 1 Channel SiC Bulk TO-247AB-3 Y
SICW050N065H-BP SICW050N065H-BP Bảng dữ liệu 60 A 250 W 13.2 S 65 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 10 ns 121 nC 20 ns 16 ns 1 Channel SiC Bulk TO-247AB-3 Y
SICW050N065H4-BP SICW050N065H4-BP Bảng dữ liệu 60 A 250 W 13.2 S 65 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 10 ns 121 nC 20 ns 16 ns 1 Channel SiC Bulk TO-247-4 Y
SICW100N065H-BP SICW100N065H-BP Bảng dữ liệu 32 A 166 W 8.5 S 130 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 15 ns 66 nC 15 ns 15 ns 1 Channel SiC Bulk TO-247AB-3 Y
SICW100N065H4-BP SICW100N065H4-BP Bảng dữ liệu 32 A 166 W 8.5 S 130 mOhms 2.6 V - 10 V, + 25 V 650 V 17 ns 15 ns 66 nC 15 ns 15 ns 1 Channel SiC Bulk TO-247-4 Y
Đã phát hành: 2024-08-19 | Đã cập nhật: 2025-06-17