Diotec Semiconductor DI038N04PQ2 Dual N-Channel Power MOSFETs
Diotec Semiconductor DI038N04PQ2 Dual N-Channel Power MOSFETs offer a low on-state resistance (10mΩ typical), a low gate charge, and fast switching times with an Avalanche rating (36mJ maximum single pulse). DI038N04PQ2 MOSFETs feature a 45V maximum drain-source voltage, 31W maximum power dissipation, and 830pF typical capacitance in a -50°C to +150°C junction temperature range. The Diotec Semiconductor DI038N04PQ2 Dual N-Channel Power MOSFETs are for DC-DC converters, power supplies, DC drives, and synchronous rectifiers.
Features
- Dual MOSFET
- Low profile, space-saving package
- Low on-state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- Commercial-grade
- UL 94V-0 case material
- AEC-Q101 qualified (-AQ only)
- Moisture Sensitivity Level (MSL) 1
- Lead-free, RoHS and REACH compliant
Applications
- DC-DC converters
- Power supplies
- DC drives
- Synchronous rectifiers
Specifications
- 45V maximum drain-source voltage
- ±20V maximum continuous gate-source voltage
- 31W maximum power dissipation
- Continuous drain current
- 38A maximum at +25°C
- 24A maximum at +100°C
- 160A maximum peak drain current
- 25A maximum continuous source current
- 120A maximum peak source current
- 36mJ maximum single pulse avalanche energy
- 1µA maximum drain-source leakage current
- ±100nA maximum gate-body leakage current
- 1.2V to 2.5V gate-source threshold voltage range
- 10mΩ typical drain-source on-state resistance
- 830pF typical capacitance
- 290pF output capacitance
- 15pF reverse transfer capacitance
- 17ns to 30ns turn-on delay/rise time
- 2ns to 17ns turn-off delay/fall time
- 14nC typical total gate charge
- 2.6nC typical gate-source charge
- 2.8nC typical gate-drain charge
- 2Ω typical intrinsic gate resistance
- -55°C to +150°C junction temperature range
Additional Resources
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Offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations.
Đã phát hành: 2023-02-21
| Đã cập nhật: 2023-02-24