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Infineon Technologies OptiMOS™ 7 Optimized 40V Power MOSFETs

Infineon Technologies OptiMOS™ 7 Optimized 40V N-Channel Power MOSFETs are optimized motor drivers that offer tailored solutions for efficient power conversion in drives, power, and gardening tools. The Infineon 40V portfolio offers additional voltage nodes and low on-state resistance [RDS(on)] with standard package options, including PG-TDSON (PQFN 5mm x 6mm), PG-TSDSON (PQFN 3.3mm x 3.3mm), and PG-WSON-8 (PQFN 5mm x 6mm dual-side cooled). Target applications include motor control, battery management systems (BMS), cordless vacuum cleaners, gardening tools, and power tools.

Features

  • Enhanced efficiency and superior performance, reducing power losses
  • Improved robustness under harsh conditions
  • Improved pulse current handling
  • Improved immunity against short-circuit events
  • Improved Immunity against parasitic turn-on events
  • Intrinsic short-circuit current limitation
  • Improved slew rate control/better EMI behavior, and ease of use
  • N‑channel, normal level
  • Enhanced SOA
  • Drives optimized
  • Superior thermal resistance
  • Controlled transconductance
  • 100% avalanche tested
  • PG-TDSON (PQFN 5mm x 6mm), PG-TSDSON (PQFN 3.3mm x 3.3mm), and PG-WSON-8 (PQFN 5mm x 6mm dual-side cooled) packages
  • Qualified for industrial applications per JEDEC JESD47, JESD22, and J‑STD‑020
  • Pb‑free lead plating and RoHS-compliant
  • Halogen‑free per IEC61249‑2‑21

Applications

  • Cordless power tools and vacuums
  • Outdoor equipment
  • Non-stackable BMS solutions
  • Low-power BDC/BLDC motor drives up to 72V

Specifications

  • 40V minimum drain‑source breakdown voltage
  • 2.35V to 3.15V gate threshold voltage range
  • 1μA to 100μA zero gate voltage drain current range
  • 100nA maximum gate‑source leakage current
  • 0.5mΩ to 1.63mΩ maximum drain‑source on‑state resistance range
  • 0.7Ω to 1Ω typical gate resistance range
  • 100S to 150S typical transconductance range
  • 31A to 458A maximum continuous drain current range
  • 696A to 1832A maximum pulsed drain current range
  • 68mJ to 726mJ maximum single-pulse avalanche energy range
  • ±20V maximum gate source voltage
  • 94W to 214W maximum power dissipation range at +25°C
  • -55°C to +175°C maximum operating storage temperature range
  • Typical capacitance ranges
    • 2400pF to 7700pF input
    • 1300pF to 4000pF output
    • 30pF to 87pF reverse transfer
  • Typical timing ranges
    • 8.2ns to 16ns turn-on delay
    • 2.6ns to 8.1ns rise
    • 13ns to 36ns turn-off delay
    • 4.5ns to 12ns fall
  • Maximum thermal resistance
    • 0.7°C/W to 1.6°C/W juntion-to-case bottom
    • 20°C/W juntion-to-case top
    • 50°C/W juntion-to-ambient, 6cm2 cooling area

Schematics

Schematic - Infineon Technologies OptiMOS™ 7 Optimized 40V Power MOSFETs
Đã phát hành: 2025-09-15 | Đã cập nhật: 2025-10-02