pSemi PE42548 UltraCMOS® SP4T RF Switch

pSemi PE42548 UltraCMOS® SP4T RF Switch supports a wideband frequency range from 9kHz to 30GHz and is powered by pSemi's UltraCMOS process, a patented advanced form of silicon-on-insulator (SOI) technology. This high-performance switch offers a low insertion loss of 2dB at 26GHz, 60ns switching time, 41dB isolation performance, and high power handling. The PE42548 operates efficiently in extreme environments, with a temperature range of -40°C to +105°C, and is housed in a compact 20-lead, 3mm x 3mm LGA package. pSemi PE42548 UltraCMOS® SP4T RF Switch is designed to provide an ideal alternative to traditional flip-chip solutions and helps accelerate time-to-market. Applications include test and measurement (T&M), 5G mmWave, microwave backhaul, radar, and satellite communications. No blocking capacitors are needed if DC voltage is not present on the RF ports.

Features

  • Manufactured on pSemi's UltraCMOS process, a patented advanced form of SOI technology
  • Wideband support up to 30GHz
  • Low insertion loss of 2dB at 26GHz
  • Fast 60ns switching time
  • High port-to-port isolation of 41dB
  • -40°C to +105°C operating temperature range
  • 20-lead, 3mm x 3mm LGA package
  • RoHS and REACH compliant

Applications

  • T&M
  • 5G mmWave
  • Microwave backhaul
  • Radar
  • Satellite communications

Functional Diagram

Block Diagram - pSemi PE42548 UltraCMOS® SP4T RF Switch
Đã phát hành: 2024-06-20 | Đã cập nhật: 2025-05-30