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Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET

Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET uses trench technology to provide excellent RDS(ON) with a low gate charge. The device can be used in various applications.

Features

  • VDS =100V, lD =10A
  • RDS(ON), < 130mΩ @ VGS=10V (Typ:95mΩ)
  • RDS(ON) < 140mΩ @ VGS=4.5V (Typ:100mΩ)
  • High-density cell design for ultra-low RDS(ON)
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EaS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability

Applications

  • Power switching application
  • Hard switched and high-frequency circuits
  • Uninterruptible power supply
  • Halogen-free
  • P/N suffix V means AEC-Q101 qualified, e.g: RM10N100LDV
Đã phát hành: 2022-09-19 | Đã cập nhật: 2022-10-10