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ROHM Semiconductor RH7P04BBKFRA 100V N-Channel Power MOSFET

ROHM Semiconductor RH7P04BBKFRA 100V N-Channel Power MOSFET is a 100V drain-source voltage (VDSS) and ±40A continuous drain current (ID) rated automotive-grade MOSFET that is AEC-Q101 qualified. The drain-source on-state resistance [RDS(ON)] is 13.8mΩ (max.) (VGS = 10V, ID = 20A) and comes in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7P04BBKFRA MOSFET is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Features

  • Wettable flanks product
  • AEC-Q101 qualified
  • 100% avalanche tested

Applications

  • ADAS
  • Information
  • Lighting
  • Body

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • 13.8mΩ (max.) (VGS = 10V, ID = 20A)
    • 19.4mΩ (max.) (VGS = 4.5V, ID = 10A)
  • 75W power dissipation (PD)
  • Total gate charge (Qg)
    • 19.8nC (typ.) (VDD = 50V, ID = 10A, VGS = 10V)
    • 10.9nC (typ.) (VDD = 50V, ID = 10A, VGS = 4.5V)
  • +175°C junction temperature (Tj)

Circuit Diagram

Schematic - ROHM Semiconductor RH7P04BBKFRA 100V N-Channel Power MOSFET

Package Diagram

Mechanical Drawing - ROHM Semiconductor RH7P04BBKFRA 100V N-Channel Power MOSFET
Đã phát hành: 2025-07-25 | Đã cập nhật: 2025-08-19