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ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET

ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET is a 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated device. The drain-source on-state resistance [RDS(ON)] for the device is 1.15mΩ (typ.) (VGS = 18V, ID = 1.1A, Tvj = +25°C) and it comes in a 15.5mm x 10.2mm TO-263CA (TSMT3) package. This device offers a fast switching speed, a wide creepage distance, and is simple to drive. The ROHM Semiconductor SCT2H12NWB MOSFET is ideal for auxiliary and switch-mode power supply applications.

Features

  • Low on-resistance [RDS(ON)]
  • Fast switching speed
  • Wide 6.1mm creepage distance
  • Simple to drive
  • Pb-free lead plating and RoHS-compliant

Applications

  • Auxiliary power supplies
  • Switch-mode power supplies

Specifications

  • Drain-source on-state resistance [RDS(ON)]
    • 1.15mΩ (typ.)/1.50mΩ (max.) (VGS = 18V, ID = 1.1A, Tvj = +25°C)
    • 1.71mΩ (typ.) (VGS = 18V, ID = 1.1A, Tvj = +125°C)
  • 39W power dissipation (PD)
  • 24nC typical total gate charge (Qg) (VDD = 800V, ID = 2A, VGS = 18V)
  • +175°C junction temperature (Tvj)

Circuit Diagram

Schematic - ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET

Package Diagram

Mechanical Drawing - ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET
Đã phát hành: 2025-07-25 | Đã cập nhật: 2025-08-21