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Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs

Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs utilize TrenchFET® Gen IV power MOSFET technology. The SiR186LDP MOSFETs feature very low RDS Qg figure-of-merit (FOM) and are tuned for the lowest RDS Qoss FOM. The Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs are ideal for synchronous rectification, primary-side switch, DC/DC converter, and motor drive switch applications.

Features

  • TrenchFET® Gen IV power MOSFET
  • Very low RDS - Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100% Rg and UIS tested

Applications

  • Synchronous rectification
  • Primary side switch
  • DC/DC converter
  • Motor drive switch

Associated Products

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn MoreGiới thiệu về Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productsliên quan đến Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs

Industry-best on-resistance in a variety of package configurations.

Learn MoreGiới thiệu về Vishay / Siliconix TrenchFET® MOSFETs View Productsliên quan đến Vishay / Siliconix TrenchFET® MOSFETs

Circuit Diagram

Application Circuit Diagram - Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs
Đã phát hành: 2021-03-11 | Đã cập nhật: 2022-03-11