STMicroelectronics S Series Trench Gate Field-Stop IGBTs

STMicroelectronics S Series Trench Gate Field-Stop IGBTs are developed with an advanced proprietary trench gate field-stop structure. STMicroelectronics S Series 1200V IGBTs are tailored to maximize low-frequency industrial system efficiency. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Features

  • 10μs of short-circuit withstand time
  • VCE(sat)
    • 1.55V (typ.) @ IC = 15A (STGW15S120DF3, STGWA15S120DF3)
    • 1.6V (typ.) @ IC = 25A (STGW25S120DF3, STGWA25S120DF3)
    • 1.65V (typ.) @ IC = 40A (STGW40S120DF3, STGWA40S120DF3)
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and fast recovery antiparallel diode

Applications

  • Industrial drives
  • Uninterruptible power supplies
  • Solar
  • Welding
Đã phát hành: 2015-05-12 | Đã cập nhật: 2022-08-11