STMicroelectronics STD65N160M9 N-channel Power MOSFET

STMicroelectronics STD65N160M9 N-channel Power MOSFET is based on super-junction MDmesh M9 technology. The MOSFET is suitable for medium/high voltage featuring very low RDS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing for an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it particularly suitable for applications that require superior power density and outstanding efficiency.

Features

  • Worldwide FOM RDS(on) Qg among silicon-based devices
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested
  • Zener-protected
Đã phát hành: 2022-09-06 | Đã cập nhật: 2023-02-13