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Toshiba XPQR3004PB 40V 400A Automotive MOSFET

Toshiba XPQR3004PB 40V MOSFET features an RDS(ON) of 0.23mΩ (typical), 400A capability, and a threshold voltage (Vth) of 2V to 3V. Additional features include +175°C maximum operating temperature and 10µA maximum leakage current (VDS = 40V). Toshiba XPQR3004PB MOSFET is offered in an L-TOGL package, which offers 0.2°C/W thermal impedance and 750W power dissipation. This device is AEC-Q101 certified and ideal for automotive applications, switching voltage regulators, motor drivers, and DC-DC converters.

Specifications

  • AEC-Q101 qualified
  • 400A drain current (DC)
  • 40V drain-source voltage
  • 750W power dissipation
  • Low drain-source on-resistance RDS(ON) = 0.23mΩ typical (VGS = 10V)
  • 0.2°C/W thermal impedance
  • 10µA maximum leakage current (VDS = 40V)
  • 2V to 3V enhancement mode (VDS = 10V, ID = 1mA)
  • 624mJ single-pulse avalanche energy
  • 175°C maximum operating temperature
  • -55°C to +175°C storage temperature range

Applications

  • Automotive
  • Switching voltage regulators
  • Motor drivers
  • DC-DC converters

Videos

Switching Time Test Circuit

Application Circuit Diagram - Toshiba XPQR3004PB 40V 400A Automotive MOSFET

Packaging & Internal Circuit

Location Circuit - Toshiba XPQR3004PB 40V 400A Automotive MOSFET

Dimensions (mm)

Mechanical Drawing - Toshiba XPQR3004PB 40V 400A Automotive MOSFET
Đã phát hành: 2023-02-01 | Đã cập nhật: 2025-08-06