WeEn Semiconductors WNS Silicon Carbide Schottky Diodes

WeEn Semiconductors WNS Silicon Carbide Schottky Diodes are designed for high-frequency switched-mode power supplies. These diodes feature highly stable switching performance, extremely fast reverse recovery time, superior efficiency to silicon diode alternatives, and reduced losses in associated MOSFET. The WNS Schottky diodes offer up to 1200V of repetitive peak reverse voltage and a -55°C to 175°C storage temperature range. Typical applications include power factor correction, telecom/server SMPS, UPS, PV inverter, PC Silverbox, LED/OLED tv, and motor drives.

Features

  • Highly stable switching performance
  • Extremely fast reverse recovery time
  • Superior in efficiency to silicon diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant

Specifications

  • Up to 1200V of repetitive peak reverse voltage
  • 650V of reverse voltage
  • 4A to 10A average forward current range IF(AV)
  • -55°C to 175°C of storage temperature
  • 175°C of junction temperature

Applications

  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC silver box
  • LED/OLED TV
  • Motor drives
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Mã Phụ tùng Bảng dữ liệu If - Dòng thuận Ff - Điện áp thuận Ifsm - Dòng tăng thuận Ir - Dòng ngược Vrrm - Điện áp ngược lặp lại Vr - Điện áp ngược Đóng gói / Vỏ bọc
WNSC5D046506Q WNSC5D046506Q Bảng dữ liệu 4 A 1.45 V 28 A 20 uA 650 V 650 V TO-220-2L
WNSC5D066506Q WNSC5D066506Q Bảng dữ liệu 6 A 1.45 V 40 A 30 uA 650 V 650 V TO-220-2L
WNSC2D151200W6Q WNSC2D151200W6Q Bảng dữ liệu
Đã phát hành: 2022-02-16 | Đã cập nhật: 2022-06-15