Wolfspeed 750V Discrete Silicon Carbide MOSFETs
Wolfspeed 750V Discrete Silicon Carbide MOSFETs feature higher breakdown voltage, offering increased design margin to support customer applications. These MOSFETs enable high system power density with a low-profile design in the TO-247-4 LP package and surface mount technology in the TO-263-7 XL package options. This enables designers to select the right part for their application. The Wolfspeed 750V MOSFETs facilitate efficient power conversion in diverse power systems. These systems include high-performance industrial power supplies, energy storage systems in Electrical Vehicle (EV) converters, and EV HVAC motor drives.
Features
- AEC-Q101 Automotive Qualified options available
- High breakdown voltage across the entire operating temperature range
- High-speed switching with low output capacitance
- High blocking voltage with low RDS(on)
- Fast intrinsic diode with low reverse recovery (Qrr)
- Gen 4 options available
Applications
- Fuel cell EV DC/DC converters
- EV and industrial HVAC motor drives
- Industrial motor control
- EV on-board chargers
- EV fast-charging infrastructure
- Industrial power supplies
- High-voltage DC-DC converters
- Drivetrain traction inverters
- Solar and energy storage systems
Specifications
- 750V blocking voltage
- 15mΩ to 60mΩ resistance range
- 126W to 262W power dissipation range
- TO-247-4LP and TO-263-7 packages
-
35A to 80A current range
- 55°C to 175°C operating temperature range
Datasheets
- E4M0025075K1 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0045075K1 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0060075K1 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0015075K1 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0015075J2 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0025075J2 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0045075J2 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- E4M0015075J2 E-Series Automotive Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- C3M0025075K1 Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- C3M0045075K1 Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
- C3M0060075K1 Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
Resources
- Gen 4 Silicon Carbide Technology Whitepaper
- EV Charging Power Topologies Design Guidebook
- PCB Layout Techniques for Discrete SiC MOSFETs
- Soldering Recommendations for Wolfspeed® Power Devices
- Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
- PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations | Wolfspeed
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Đã phát hành: 2024-05-09
| Đã cập nhật: 2025-03-12