Wolfspeed Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

The 1200V SiC Schottky diodes feature the MPS (Merged PiN Schottky) design technology, which is more robust and reliable than typical Schottky barrier diodes. These diodes offer high surge current capability, high-frequency operation, easy parallel operation, and reduced heat sink requirements. The SiC 1200V MOSFETs and diodes are ideal for uninterruptible power supply (UPS), motor control and drives, switched-mode power supplies (SMPS), electric vehicle charging, and high-voltage DC/DC converters.

Pairing Wolfspeed’s SiC MOSFETs and diodes creates a powerful combination of higher efficiency for demanding applications and reduced component pricing when purchased together.

Features

  • Gen 4 options available
  • 1200V Silicon Carbide Schottky Diodes
    • Low VF = 1.27V @25°C
    • Positive temperature coefficient
    • Zero reverse recovery
    • Robust MPS technology
    • Low figure of merit (QC x VF)
    • Wide range of Tj (-55°C to 175°C)
    • Standard TO-220 package
    • High surge current capability
    • High-frequency operation
    • Direct drop-in replacement of C3D
    • Easy parallel operation
    • Reduced heat sink requirements
  • 1200V Silicon Carbide MOSFETs
    • Easier to drive (15V gate drive)
    • Stable Rds(on) over-temperature
    • Avalanche ruggedness
    • Rugged body diode (no need for an external diode)
    • Available in a wide variety of packages and on-resistance options, including separate Kelvin source pin
    • Improved system-level efficiency with lower switching and conduction losses
    • Improved system-level power density
    • Better hard-switching performance with a low Rds(on) and increased CGS/CGD

Applications

  • Uninterruptible Power Supply (UPS)
  • Motor control and drives
  • Switched-mode Power Supplies (SMPS)
  • EV onboard charging
  • Auxiliary power supplies
  • Industrial power supplies
  • Solar and energy storage systems
  • Electric vehicle charging
  • High-voltage DC/DC converters
Đã phát hành: 2020-06-09 | Đã cập nhật: 2025-03-12