NXP Semiconductors TEA2206T Active Bridge Rectifier Controller
NXP Semiconductors TEA2206T Active Bridge Rectifier Controller is designed to replace the two low-side diodes in the traditional diode bridge with MOSFETs. Using the TEA2206T with low-ohmic high-voltage external MOSFETs significantly improves the efficiency of the power converter as the typical rectifier diode forward conduction losses are eliminated. In addition, the TEA2206T includes an X-capacitor discharge function to reduce power consumption while in a standby condition.The TEA2206T controller is intended for power supplies with a boost-type power-factor controller as a first stage. The second stage can be a resonant controller, a flyback controller, or any other controller topology. It can be used in any power supply requiring high efficiency.
NXP Semiconductors TEA2206T Active Bridge Rectifier Controller is offered in an SO8 package and fabricated in a Silicon-on-Insulator (SOI) process.
Features
- Efficiency features
- Reduced forward conduction losses of the diode rectifier bridge
- Very low 2mW IC power consumption
- Application features
- Directly drives two rectifier MOSFETs
- Very low external part count
- Integrated 2mA X-capacitor discharge
- Self-supplying
- Control features
- Undervoltage lockout
- Drain-source overvoltage protection for all external power MOSFETs
- Gate pull-down currents at startup for all external power MOSFETs
- Physical features
- -40°C to +125°C junction temperature range
- SO8 small outline package; 8 leads; body width 3.9mm
Applications
- Adapters
- Power supplies for desktop and all-in-one PCs
- Power supplies for displays
- Power supplies for servers
Documents
Block Diagram
Typical Configuration
Application Diagram
Package Outline
Đã phát hành: 2021-06-17
| Đã cập nhật: 2022-03-11
