Vishay 800VDC 50A Bidirectional eFuse Reference Design

Vishay 800VDC 50A Bidirectional eFuse Reference Design features SiC MOSFETs and a VOA300 optocoupler, handling continuous power up to 40kW. The board operates continuously at full power with <25W of losses and without requiring active cooling. The design includes a preload function, continuous current monitoring, and overcurrent protection with fault shutdown in only 2.5μs. The eFuse construction uses a standard double-sided four-layer PCB (FR4) with 70μm thick copper for each layer. The overall dimensions are 150mm x 90mm, with some connectors extending beyond the edges. The upper part of PCB houses high-voltage circuitry (12 x SCT4020 SiC MOSFETs), while the lower part contains low-voltage control circuitry with connectors, control buttons, status LEDs, and multiple test points. Vishay 800VDC 50A Bidirectional eFuse Reference Design can be enabled or disabled using the ON / OFF push buttons on the PCB or via an external controller.

Features

  • Includes SiC MOSFETs and a VOA300 optocoupler
  • Handles continuous power up to 40kW
  • Operates continuously at full power with <25W of losses and no active cooling
  • Preload function
  • Continuous current monitoring
  • Overcurrent protection with shutdown in <2.5μs
  • Standard double-sided four-layer PCB (FR4) with 70μm thick copper for each layer
  • 150mm x 90mm dimensions with some connectors extending beyond edge
  • Upper part of PCB houses high-voltage circuitry (12 x SCT4020 SiC MOSFETs)
  • Lower part of PCB has low-voltage control circuitry with connectors, control buttons, status LEDs, and multiple test points
  • Can be enabled or disabled using the ON / OFF push buttons on the PCB or via an external controller

Principle Diagram

Vishay 800VDC 50A Bidirectional eFuse Reference Design

3D Image

Vishay 800VDC 50A Bidirectional eFuse Reference Design
Đã phát hành: 2023-07-18 | Đã cập nhật: 2024-03-05