Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs

Vishay Siliconix's Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs set new benchmarks for size and on-resistance. The new Si8497DB is the industry's first 30V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30V chipscale device in the 1.6 mm by 1.6 mm form factor. Vishay's TrenchFET Gen III P-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing.