GP2T030A170H

Name: SemiQ GP2T030A170H
Brand: SemiQ
SKU: 148-GP2T030A170H
Price: 30.21 USD
Availability: OutOfStock

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Mouser #:

148-GP2T030A170H

Mfr. #:

GP2T030A170H

Mfr.:

SemiQ

Description:

SiC MOSFETs SiC MOSFET 1700V, 30mohm TO-247-4L, Industrial

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GP2T030A170H Datasheet (PDF)

ECAD Model:

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Learn more about SemiQ GP2T030A170H

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	83 A
Rds On - Drain-Source Resistance:	36 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	233 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	564 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Fall Time:	21 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	8 ns
Series:	GP2T
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	19 ns

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Datasheet

GP2T030A170H Datasheet (PDF)

Compliance Codes

USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GP2T030A170 QSiC™ 1700V SiC MOSFET

SemiQ GP2T030A170 QSiC™ 1700V SiC MOSFET is engineered for medium-voltage high-power conversion applications, enabling more compact system designs at a large scale with lower system costs and higher power densities. This high-speed, switching planar D-MOSFET offers a reliable body diode that operates up to +175°C. The module is tested beyond 1900V and UIL avalanche tested to 600mJ. The series delivers low switching and conduction losses and low capacitance. The 1700V device also features a rugged gate oxide for long-term reliability and undergoes wafer-level burn-in (WLBI) to screen out potentially weak oxide devices. SemiQ GP2T030A170 QSiC 1700V SiC MOSFET is a four-pin TO-247-4L-packaged discrete with drain, source, driver source, and gate pins. Applications include solar inverters, electric vehicle (EV) charging stations, and motor drives.