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Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.

Features

  • High reverse voltage
  • Advanced planar technology
  • Low on-state resistance
  • Fast switching time
  • Low gate charge
  • Low total switching energy
  • Engineering samples available
  • UL 94V-0 rated case material
  • Halogen-free, lead-free, and RoHS compliant

Applications

  • Charging systems for electric vehicles (EV)
  • Solar inverters
  • Telecom power supplies
  • DC-DC converters
  • DC drives
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC)
  • Inverters

Specifications

  • 650V and 1200V drain-source voltage
  • Maximum 80mΩ to 23mΩ on-state resistance
  • 100µA drain-source leakage current
  • From to -8V to 22V continuous gate-source-voltage range
  • 15V to 18V recommended turn-on gate voltage range
  • 0V recommended turn-off gate voltage
  • 600W power dissipation
  • 100A peak drain current
  • 0.54K/W maximum thermal resistance
  • -55°C to +175°C operating junction temperature range
  • Industrial TO-247 package with 3x and 4x leads

Videos

Additional Resources

Related MOSFETs

Diotec Semiconductor Advanced Trench Technology Power MOSFETs

Offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations.

Learn MoreGiới thiệu về Diotec Semiconductor Advanced Trench Technology Power MOSFETs View Productsliên quan đến Diotec Semiconductor Advanced Trench Technology Power MOSFETs
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Mã Phụ tùng Bảng dữ liệu Đóng gói / Vỏ bọc Id - Dòng cực máng liên tục Pd - Tiêu tán nguồn Thời gian giảm Vgs th - Điện áp ngưỡng cực cổng-cực nguồn Thời gian tăng Qg - Điện tích cực cổng
DIF120SIC022 DIF120SIC022 Bảng dữ liệu TO-247-4 120 A 340 W 35 ns 4 V 38 ns 269 nC
DIF120SIC028 DIF120SIC028 Bảng dữ liệu TO-247-4 118 A 715 W 49 ns 4 V 104 ns 373 nC
DIF120SIC053 DIF120SIC053 Bảng dữ liệu TO-247-4 65 A 278 W 15 ns 4 V 58 ns 121 nC
DIW065SIC015 DIW065SIC015 Bảng dữ liệu TO-247-3 150 A 550 W 27 ns 4 V 136 ns 236 nC
DIW065SIC049 DIW065SIC049 Bảng dữ liệu TO-247-3 60 A 550 W 9 ns 4 V 35 ns 128 nC
DIW065SIC080 DIW065SIC080 Bảng dữ liệu TO-247-3 36 A 175 W 9 ns 4 V 13 ns 75 nC
DIF120SIC022-AQ DIF120SIC022-AQ Bảng dữ liệu TO-247-4 120 A 340 W 35 ns 4 V 38 ns 269 nC
DIF120SIC053-AQ DIF120SIC053-AQ Bảng dữ liệu TO-247-4 65 A 278 W 15 ns 4 V 58 ns 121 nC
DIW120SIC022-AQ DIW120SIC022-AQ Bảng dữ liệu TO-247-3 120 A 340 W 35 ns 4 V 38 ns 269 nC
DIW120SIC023-AQ DIW120SIC023-AQ Bảng dữ liệu TO-247-3 125 A 600 W 2.9 V 121 nC
Đã phát hành: 2023-10-20 | Đã cập nhật: 2024-10-14