Infineon Technologies N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
OptiMOS™ products are available in high-performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency, and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Features
- Optimized SyncFET for high-performance buck converters
- 100% avalanche tested
- N-channel
- Very low on-resistance RDS(on) @ VGS=4.5V
- Ultra-low gate (Qg) and output charge (Qoss) for given RDS(on)
- Qualified according to JEDEC for target applications
- Superior thermal resistance
- Pb-free plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Applications
- Onboard power for the server
- Power management for high-performance computing
- Synchronous rectification
- High power density point of load converters
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