onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET is engineered to handle high currents, which is crucial for DC-DC power conversion stages. This 40V, 207A, single N-channel power MOSFET offers lower on-resistance, increased higher power density, and superior thermal performance. The shield gate trench design provides an ultra-low gate charge and 1.3mΩ RDS(on). The compact 3.3mm x 3.3mm source-down dual cool GEN2 package is lead free, halogen free, BFR free, and RoHS compliant. onsemi NTTFSSCH1D3N04XL T10 PowerTrench MOSFET is designed to provide an efficient solution for data center and cloud applications.
Features
- Ultra-low 1.3mΩ Rds(on) improves system efficiency
- Low Qg and capacitance to minimize driving and switching losses
- Board-level reliability (BLRT testing): 1000 cycles with -40°C to +125°C, 10-min. dwell, +20°C/min, 6 layers 2.35T
- Excellent thermal conduction by advanced source-down center gate dual-cooling package technology
- 3.3mm x 3.3mm x 0.58mm package dimensions
- Lead free, halogen free, BFR free, and RoHS compliant
Applications
- Cloud systems
- Data centers / IBC
- Power supply units (PSUs)
Videos
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Đã phát hành: 2024-10-23
| Đã cập nhật: 2025-05-13