onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module
onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module is a 1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR80WDT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR80WDT EliteSiC MOSFET module is ideally used in HV DC-DC and onboard chargers in xEV applications.
Features
- DIP Silicon Carbide (SiC) dual half-bridge power module
- 1200V drain to source voltage (VDSS)
- 20A continuous drain current (ID)
- 80mΩ (typical) drain to source on-resistance (RDS(ON))
- -40°C to 175°C operating Junction temperature (TJ) range
- Creepage and clearance per IEC60664-1 and IEC 60950-1
- Compact design for low total module resistance
- Module serialization for full traceability
- Lead-free
- ROHS and UL94V-0 compliant
- Automotive qualified per AEC-Q101 and AQG324
Applications
- HV DC/DC and on-board charger for EV-PHEV
- 11kW to 22kW on-board charger for EV-PHEV
SiC MOSFET Half-Bridge Module
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Đã phát hành: 2024-08-02
| Đã cập nhật: 2024-08-28